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| RoHS Compliant Amplifier, Distributed, 0.1W 1.0-18.0 GHz Features MAAMGM0002-DIE Rev E 0.1 Watt Saturated Output Power Level 4 dB Typical Noise Figure Select-at-Test Biasing MSAGTM Process Description The MAAMGM0002-Die is a 0.1W Distributed Amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. The MMIC can be used as a broadband amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested to ensure performance compliance. The part is fabricated using M/A-COM's GaAs Multifunction SelfAligned Gate Process. M/A-COM's MSAGTM process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications Test Equipment Electronic Warfare Radar Also Available in: Description Part Number Ceramic Package MAAMGM0002 Sample Board (Die) MAAMGM0002-DIE-SMB SAMPLES Sample Board (Packaged) MAAMGM0002-SMB Electrical Characteristics: TB = 40C1, Z0 = 50, VDD = 5V, IDQ = 75 mA2, Pin = 13 dBm Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compression Point Small Signal Gain Noise Figure Output TOI Input VSWR f = 2 GHz Output VSWR f = 2 GHz Gate Current Drain Current 1. 2. Symbol f POUT PAE P1dB G NF OTOI VSWR VSWR IGG IDD 7 Minimum 1.0 19.5 21 12 20 9 4 31 1.7:1 1.7:1 <2 100 150 2:1 2:1 mA mA Typical Maximum 18.0 Units GHz dBm % dBm dB dB dBm 1 TB = MMIC Base Temperature Adjust VGG between -1.0 and -0.3 V to achieve IDQ indicated. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. RoHS Compliant Amplifier, Distributed, 0.1W 1.0-18.0 GHz Maximum Ratings3 Parameter Input Power Drain Voltage Gate Voltage Gate Voltage, Select at Test Quiescent Drain Current (No RF) Quiescent DC Power Dissipation (No RF) Junction Temperature Storage Temperature Symbol PIN VDD VGG HI, MID, LO IDQ PDISS TJ TSTG Absolute Maximum 19.0 +7.0 -1.5 -6.0 120 0.5 170 -55 to +150 Units dBm V V V mA W C C MAAMGM0002-DIE Rev E 3. Operation beyond these limits may result in permanent damage to the part. Recommended Operating Conditions4 Parameter Drain Voltage Gate Voltage Gate Voltage, Select at Test Input Power Thermal Resistance MMIC Base Temperature Symbol VDD VGG HI, MID, LO PIN JC TB Min 4.5 -1.0 Typ 5.0 -0.6 -5.0 13 91.2 Note 5 17 Max 5.5 -0.3 Unit V V V dBm C/W C 4. Operation outside of these ranges may reduce product reliability. 5. MMIC Base Temperature = 170C -- JC* VDD * IDQ Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps according to which configuration you are using. Select-at-Test Gate Bias Figure 5a. 1. With VDD = 0, apply VGG = -5V to HI, MID or LO for desired IDQ. 2. Set VDD = 5V. Confirm IDQ. 3. Power down sequence in reverse. 4.Turn off VGG last. Direct Gate Bias Figure 5b. 1. With VDD = 0 V, set VGG = -0.8 V. 2. Set VDD = 5 V. 3. Adjust VGG for desired IDQ. 4. Power down sequence in reverse. 5. Turn off VGG last. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. RoHS Compliant Amplifier, Distributed, 0.1W 1.0-18.0 GHz 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 0.5 2.5 4.5 6.5 8.5 10.5 12.5 14.5 16.5 18.5 20.5 22.5 7 6 5 4 3 2 1 0 2 4 6 8 10 12 14 16 18 Gain, Idq = 25% Gain, Idq = 35% Gain, Idq = 50% NF, Idq = 25% NF, Idq = 35% NF, Idq = 50% MAAMGM0002-DIE Rev E 12 POUT PAE 11 10 9 8 Frequency (GHz) Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 5V, Pin = 14dBm. Frequency (GHz) Figure 2. Gain and Noise Figure vs Idq as a Relative Percentage of Idss (50% Idss ~ 100 mA). 6 Input VSWR Output VSWR 5 4 3 2 1 0.5 2.5 4.5 6.5 8.5 10.5 12.5 14.5 16.5 18.5 20.5 22.5 Frequency (GHz) Figure 3. Input and Output VSWR. 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. RoHS Compliant Amplifier, Distributed, 0.1W 1.0-18.0 GHz Mechanical Information Chip Size: 2.98 x 1.98 x 0.075 mm 0.127mm. MAAMGM0002-DIE Rev E (118 x 78 x 3 mils) 0.970mm. 2.853mm. 2.980mm. 1.980mm. 1.828mm. VDD OUT 1.094mm. 0.569mm. IN 0.152mm. 0 HI MID LO VGG GND 1.325mm. 1.625mm. 1.925mm. 2.225mm. 2.525mm. 0 Figure 4. Die Layout Bond Pad Dimensions Pad RF: IN, OUT Drain Supply Voltage: VDD Direct Gate Supply Voltage: VGG Select-at-Test Gate Supply Voltage: HI, MID, LO Ground: GND Size (m) 100 x 100 150 x 150 150 x 150 150 x 150 150 x 150 Size (mils) 4x4 6x6 6x6 6x6 6x6 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. RoHS Compliant Amplifier, Distributed, 0.1W 1.0-18.0 GHz VDD 0.1 F MAAMGM0002-DIE Rev E 100 pF VDD RFOUT OUT RFIN IN HI MID LO VGG GND 100 pF VGG 0.1 F Wirebond required to reference on-chip Select-at-Test bias network. Figure 5a. Required Bonding for Select-at-Test Gate Bias Configuration. Support circuitry typical of MMIC characterization fixture for CW testing. Pad HI MID LO Applied Voltage (V) -5 -5 -5 % IDSS 50 35 25 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. RoHS Compliant Amplifier, Distributed, 0.1W 1.0-18.0 GHz Assembly and Bonding Diagram 0.1 F MAAMGM0002-DIE VDD Rev E 100 pF VDD RFOUT OUT RFIN IN HI MID LO VGG GND 100 pF VGG 0.1 F Figure 5b. Required Bonding for Direct Application of Gate Bias. Support circuitry typical of MMIC characterization fixture for CW testing. Pad VGG Applied Voltage (V) -1.0 to -0.3 % IDSS 25 - 50 Die Handling: Refer to Application Note AN3016. Assembly Instructions: Die Attach: Use AuSn (80/20) 1 mil. preform solder. Limit time @ 310 C to less than 7 minutes. Refer to Application Note AN3017 for more detailed information. Wirebonding: Bond @ 160 C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. 6 Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. |
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